Chin. J. Semicond. > 1991, Volume 12 > Issue 6 > 346-351
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负电子微分迁移率场效应管的二维数值分析

林绪伦 , 朱恩均 , 黄敞 and 肖硕

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(6): 346-351
      林绪伦, 朱恩均, 黄敞, 肖硕. 负电子微分迁移率场效应管的二维数值分析[J]. 半导体学报(英文版), 1991, 12(6): 346-351.
      Citation:
      林绪伦, 朱恩均, 黄敞, 肖硕. 负电子微分迁移率场效应管的二维数值分析[J]. 半导体学报(英文版), 1991, 12(6): 346-351.
      shu

      • Received Date: 2015-08-19

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