Chin. J. Semicond. > 1987, Volume 8 > Issue 2 > 130-136
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单边突变p~+n结的非耗尽分析

傅春寅 , 鲁永令 , 曾树荣 and 吴恩

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(2): 130-136
      傅春寅, 鲁永令, 曾树荣, 吴恩. 单边突变p~+n结的非耗尽分析[J]. 半导体学报(英文版), 1987, 8(2): 130-136.
      Citation:
      傅春寅, 鲁永令, 曾树荣, 吴恩. 单边突变p~+n结的非耗尽分析[J]. 半导体学报(英文版), 1987, 8(2): 130-136.
      shu

      • Received Date: 2015-08-19

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