Chin. J. Semicond. > 1987, Volume 8 > Issue 3 > 312-315
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Pd在P-Si中的物理行为

周洁 , 阮圣央 , 郝灴 , 葛惟锟 , 吉秀江 and 李树英

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(3): 312-315
      周洁, 阮圣央, 郝灴, 葛惟锟, 吉秀江, 李树英. Pd在P-Si中的物理行为[J]. 半导体学报(英文版), 1987, 8(3): 312-315.
      Citation:
      周洁, 阮圣央, 郝灴, 葛惟锟, 吉秀江, 李树英. Pd在P-Si中的物理行为[J]. 半导体学报(英文版), 1987, 8(3): 312-315.
      shu

      • Received Date: 2015-08-19

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