Chin. J. Semicond. > 1993, Volume 14 > Issue 5 > 292-296
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考虑碰撞电离下的亚微米MOSFET的二维数值模拟和分析

张锡盛 , 何新平 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(5): 292-296
      张锡盛, 何新平, 李志坚. 考虑碰撞电离下的亚微米MOSFET的二维数值模拟和分析[J]. 半导体学报(英文版), 1993, 14(5): 292-296.
      Citation:
      张锡盛, 何新平, 李志坚. 考虑碰撞电离下的亚微米MOSFET的二维数值模拟和分析[J]. 半导体学报(英文版), 1993, 14(5): 292-296.
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      • Received Date: 2015-08-20

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