Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 197-203

InAs Wires on InP (001)

Wu Ju and Wang Zhanguo

+ Author Affiliations

PDF

Abstract: The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy.These InAs wires have some distinctive features in their growth and structure.This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

Key words: quantum wires InAsMBE

1

Optical bistability in a two-section InAs quantum-dot laser

Jiang Liwen, Ye Xiaoling, Zhou Xiaolong, Jin Peng, Lü Xueqin, et al.

Journal of Semiconductors, 2010, 31(11): 114012. doi: 10.1088/1674-4926/31/11/114012

2

Residual impurities and electrical properties of undoped LEC InAs single crystals

Hu Weijie, Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, et al.

Journal of Semiconductors, 2010, 31(4): 042001. doi: 10.1088/1674-4926/31/4/042001

3

1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure

Liu Ning, Jin Peng, Wu Ju, Wang Zhanguo

Chinese Journal of Semiconductors , 2007, 28(S1): 215-217.

4

High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature

Gao Hongling, Wang Baoqiang, Zhu Zhanping, Li Chengji, Duan Ruifei, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 200-203.

5

GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates

Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei, Niu Zhichuan, et al.

Chinese Journal of Semiconductors , 2007, 28(7): 1088-1091.

6

Strain and Annealing Effect of SiGe/Si Heterostructure in Limited Area Grown by MBE

Yang Hongbin, Fan Yongliang, Zhang Xiangjiu

Chinese Journal of Semiconductors , 2007, 28(8): 1226-1231.

7

Lattice Perfection of GaSb and InAs Single Crystal Substrate

Lü Xiaohong, Zhao Youwen, Sun Wenrong, Dong Zhiyuan

Chinese Journal of Semiconductors , 2007, 28(S1): 163-166.

8

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Li Fanghua, Jiang Zuimin

Chinese Journal of Semiconductors , 2006, 27(S1): 148-150.

9

Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses

Zhang Guanjie, Xu Bo, Chen Yonghai, Yao Jianghong, Lin Yaowang, et al.

Chinese Journal of Semiconductors , 2006, 27(6): 1012-1015.

10

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Xu Tianning, Wu Huizhen, Si Jianxiao, Cao Chunfang, Qiu Dongjiang, et al.

Chinese Journal of Semiconductors , 2006, 27(S1): 87-91.

11

MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs

He Li, Chen Lu, Wu Jun, Wu Yan, Wang Yuanzhang, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 381-387.

12

A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant

Su Shubing, Xu Anhuai, Liu Xinyu, Qi Ming, Liu Xunchun, et al.

Chinese Journal of Semiconductors , 2006, 27(6): 1064-1067.

13

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

Niu Zhichuan, Ni Haiqiao, Fang Zhidan, Gong Zheng, Zhang Shiyong, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 482-488.

14

Performance of an InP DHBT Grown by MBE

Su Shubing, Liu Xinyu, Xu Anhuai, Yu Jinyong, Qi Ming, et al.

Chinese Journal of Semiconductors , 2006, 27(5): 792-795.

15

Lasing Characteristics of InAs/GaAs Quantum-Dot Lasers with Multistacked Dot Layer

Qian Jiajun, Ye Xiaoling, Chen Yonghai, Xu Bo, Han Qin, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 184-188.

16

GSMBE外延生长SGOI材料的退火行为

Chinese Journal of Semiconductors , 2005, 26(6): 1149-1153.

17

Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors

Zeng Yuxin, Liu Wei, Yang Fuhua, Xu Ping, Zhang Hao, et al.

Chinese Journal of Semiconductors , 2005, 26(S1): 238-242.

18

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, et al.

Chinese Journal of Semiconductors , 2005, 26(12): 2378-2384.

19

Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD

Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei

Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.

20

Tuning of infrared absorption wavelength of MBE InGaAs/GaAs quantum Dots

Kong Meiying, Zeng Yiping, Li Jinmin

Chinese Journal of Semiconductors , 2003, 24(S1): 78-80.

  • Search

    Advanced Search >>

    GET CITATION

    Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203.
    Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3205 Times PDF downloads: 2165 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203. ****Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
      Citation:
      Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203. ****
      Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.

      InAs Wires on InP (001)

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return