
Abstract: The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy.These InAs wires have some distinctive features in their growth and structure.This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.
Key words: quantum wires, InAs, MBE
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Received: 20 August 2015 Revised: Online: Published: 01 February 2006
Citation: |
Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203.
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Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
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