Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1122-1126
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温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响

金海岩 and 张利春

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Key words: 锗硅材料, 禁带变窄量, 费米能级, 简并半导体

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    金海岩, 张利春. 温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响[J]. 半导体学报(英文版), 2001, 22(9): 1122-1126.
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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1122-1126
      金海岩, 张利春. 温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响[J]. 半导体学报(英文版), 2001, 22(9): 1122-1126.
      Citation:
      金海岩, 张利春. 温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响[J]. 半导体学报(英文版), 2001, 22(9): 1122-1126.
      shu

      • Received Date: 2015-08-20

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