Chin. J. Semicond. > 1996, Volume 17 > Issue 9 > 641-645

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MOCVD和GSMBE生长Ga_（0．5）In_（0．5）P外延层中有序结构的研究

董建荣，李晓兵，孙殿照，陆大成，李建平，孔梅影，王占国

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(9): 641-645
      董建荣，李晓兵，孙殿照，陆大成，李建平，孔梅影，王占国. MOCVD和GSMBE生长Ga_（0．5）In_（0．5）P外延层中有序结构的研究[J]. 半导体学报(英文版), 1996, 17(9): 641-645.
      Citation:
      董建荣，李晓兵，孙殿照，陆大成，李建平，孔梅影，王占国. MOCVD和GSMBE生长Ga_（0．5）In_（0．5）P外延层中有序结构的研究[J]. 半导体学报(英文版), 1996, 17(9): 641-645.
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      • Received Date: 2015-08-18

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