Chin. J. Semicond. > 1987, Volume 8 > Issue 2 > 214-217
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在700℃下液相外延生长的GaAs、Al_xGa_(1-x)As中镁的掺杂特性

刘宏勋 , 章蓓 , 王舒民 , 虞丽生 , 王维义 , 逄明雪 and 赵阳

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(2): 214-217
      刘宏勋, 章蓓, 王舒民, 虞丽生, 王维义, 逄明雪, 赵阳. 在700℃下液相外延生长的GaAs、Al_xGa_(1-x)As中镁的掺杂特性[J]. 半导体学报(英文版), 1987, 8(2): 214-217.
      Citation:
      刘宏勋, 章蓓, 王舒民, 虞丽生, 王维义, 逄明雪, 赵阳. 在700℃下液相外延生长的GaAs、Al_xGa_(1-x)As中镁的掺杂特性[J]. 半导体学报(英文版), 1987, 8(2): 214-217.
      shu

      • Received Date: 2015-08-19

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