Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 644-649
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直流磁控溅射制备用于G aA s M E SFET钝化的AlN的工艺研究

曹昕 , 罗晋生 , 陈堂胜 and 陈克金

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 644-649
      曹昕, 罗晋生, 陈堂胜, 陈克金. 直流磁控溅射制备用于G aA s M E SFET钝化的AlN的工艺研究[J]. 半导体学报(英文版), 1999, 20(8): 644-649.
      Citation:
      曹昕, 罗晋生, 陈堂胜, 陈克金. 直流磁控溅射制备用于G aA s M E SFET钝化的AlN的工艺研究[J]. 半导体学报(英文版), 1999, 20(8): 644-649.
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      • Received Date: 2015-08-20

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