Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 132-135
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Resonant Tunneling Diode Model Based on Non-Equilibrium-Green's-Function

Wang Lingquan, Wang Yan, Chen Peiyi and Yu Zhiping

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Abstract: The Non-Equilibrium-Green's-Function ( NEGFD based model of resonant tunneling diode ( RTDD is studied. By calculating the distribution ofelectron densities inside the devices Using the NEGF method I-V characteristics of the RTD is depicted. A AlGaAs/GaAs/AlGaAs sandwiched RTD structure is the chosen as the ob ect of the calculation. By varying parameters comparison is made to explicate the influence of the width of the barrier and well. The correctness of the results are explained theoretically and compared with a analytical model based on Wigner function.

Key words: non-Equilibrium Green's function,  resonant tunneling diode,  Schrodinger-Poisson Equation

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 132-135
      Wang Lingquan, Wang Yan, Chen Peiyi, Yu Zhiping. Resonant Tunneling Diode Model Based on Non-Equilibrium-Green's-Function[J]. Journal of Semiconductors, 2003, 24(S1): 132-135. ****Wang L Q, Wang Y, Chen P Y, Yu Z P. Resonant Tunneling Diode Model Based on Non-Equilibrium-Green\'s-Function[J]. Chin. J. Semicond., 2003, 24(S1): 132.
      Citation:
      Wang Lingquan, Wang Yan, Chen Peiyi, Yu Zhiping. Resonant Tunneling Diode Model Based on Non-Equilibrium-Green's-Function[J]. Journal of Semiconductors, 2003, 24(S1): 132-135. ****
      Wang L Q, Wang Y, Chen P Y, Yu Z P. Resonant Tunneling Diode Model Based on Non-Equilibrium-Green\'s-Function[J]. Chin. J. Semicond., 2003, 24(S1): 132.
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      Resonant Tunneling Diode Model Based on Non-Equilibrium-Green's-Function

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China,Institute of Microelectronics, Tsinghua University, Beijing 100084, China and Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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