Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 271-274
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以注氮SiO_2作为铜互连技术中的新型阻挡层(英文)

张国海 , 夏洋 , 钱鹤 , 高文芳 , 于广华 and 龙世兵

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Key words: 超大规模集成电路, 互连, 铜, 阻挡层

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 271-274
      张国海, 夏洋, 钱鹤, 高文芳, 于广华, 龙世兵. 以注氮SiO_2作为铜互连技术中的新型阻挡层(英文)[J]. 半导体学报(英文版), 2001, 22(3): 271-274.
      Citation:
      张国海, 夏洋, 钱鹤, 高文芳, 于广华, 龙世兵. 以注氮SiO_2作为铜互连技术中的新型阻挡层(英文)[J]. 半导体学报(英文版), 2001, 22(3): 271-274.
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      • Received Date: 2015-08-20

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