Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 205-208
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Monte Carlo Simulation of tunneling nanoelectronics device

Zhou Jicheng, Long Sirui, He Hongbo and Li Yibing

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Abstract: A simulator based on orthodox theory and Monte Carlo method is depicted. The simulator is suitable for a kind of quantum device-- single electron transistors (SET). It simulates the propagation of electrons through a network consisting of quantum tunnel junctions, capacitors and ideal voltage sources. The simulation of the SET which is comprised of coulomb single island and multi-islands are done using the simulator.

Key words: tunnel unction,  quantum island,  Monte-Carlo method,  computer simulation

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 205-208
      Zhou Jicheng, Long Sirui, He Hongbo, Li Yibing. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Journal of Semiconductors, 2003, 24(S1): 205-208. ****Zhou J C, Long S R, He H B, Li Y B. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Chin. J. Semicond., 2003, 24(S1): 205.
      Citation:
      Zhou Jicheng, Long Sirui, He Hongbo, Li Yibing. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Journal of Semiconductors, 2003, 24(S1): 205-208. ****
      Zhou J C, Long S R, He H B, Li Y B. Monte Carlo Simulation of tunneling nanoelectronics device[J]. Chin. J. Semicond., 2003, 24(S1): 205.
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      Monte Carlo Simulation of tunneling nanoelectronics device

      • Information Science and Engineering School, Central South University, Changsha 410075, China,Information Science and Engineering School, Central South University, Changsha 410075, China,Information Science and Engineering School, Central South University, Changsha 410075, China and Information Science and Engineering School, Central South University, Changsha 410075, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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