J. Semicond. > 2021, Volume 42 > Issue 8 > 081801
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REVIEWS

Ultraviolet communication technique and its application

Liang Guo1, 2, 3, Yanan Guo1, 2, 3, Junxi Wang1, 2, 3 and Tongbo Wei1, 2, 3,

+ Author Affiliations

 Corresponding author: Tongbo Wei, tbwei@semi.ac.cn

DOI: 10.1088/1674-4926/42/8/081801

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Abstract: With recent developments of deep ultraviolet (DUV) light-emitting diodes and solar-blind detectors, UV communication (UVC) shows great potential in replacing traditional wireless communication in more and more scenarios. Based on the atmospheric scattering of UV radiation, UVC has gained considerable attention due to its non-line-of-sight ability, omnidirectional communication links and low background noise. These advantages make UVC an ideal option for covert secure communication, especially for military communication. In this review, we present the history and working principle of UVC with a special focus on its light sources and detectors. Comprehensive comparison and application of its light sources and detectors are provided to the best of our knowledge. We further discuss the future application and outlook of UVC. Hopefully, this review will offer valuable insights into the future development of UVC.

Key words: ultraviolet communication, non-line-of-sight, optical wireless communication



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Fig. 1.  (Color online) An example of UVC system and network[4].

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Fig. 2.  The typical configuration of UVC.

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Fig. 3.  (Color online) The spectrum of solar radiation on earth[37].

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Fig. 4.  Typical channel models of UVC: (a) LOS model, (b) NLOS model.

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Fig. 5.  (Color online) The schematic of the experimental setup for UV laser-based NLOS UWOC[33].

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Fig. 6.  (Color online) (a) Optical spectra of the LED under a bias voltage of 7 V[64]. (b) The small-signal frequency response of the system. The dashed line indicates the –3 dB bandwidth, which is approximately 29 MHz at distance = 0[64]. (c) The modulation bandwidth of the system at a distance of 5 m with different injection currents[60]. (d) The experimental setup and the flow diagram of the signal generation and offline processing[60].

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Fig. 7.  (Color online) (a) A 4 × 4 matrix device structure with a single device size of 60 μm, with the corresponding changes in device response frequency and current[75]. (b) Simplified cross-sectional schematic of a single DUV μLED presented in this work. Dimensions are not to scale[34]. (c) Plan view optical image of the fabricated DUV μLED array presented in this work[34]. (d) The 3 dB electrical modulation bandwidth of the DUV μLED as a function of current density[34].

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Fig. 8.  (a) Normalized PL decay kinetics for AlGaN MQW structures with different well widths: (1) 5 nm, (2) 4.1 nm, and (3) 2.5 nm. Measurements were performed under excitation energy density of 25 mJ/cm2[90]. (b) Well-width dependence of carrier lifetimes for AlGaN MQW structures at excitation energy density of 70 μJ/cm2[90]. (c) Lifetime for different temperatures derived from the TD-TRPL results[91].

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Fig. 9.  (Color online) (a) The experimental setup of the receiver side[66]. (b) The experimental setup[19]. (c) Experimental setup for solar-blind NLOS UV communication with diversity reception[30].

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Fig. 10.  Application of UVC in aircraft squad.

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Table 1.   Comparison of DUV light sources in UVC system.

SourcesPowerWavelength (nm)Lifetime (h)EfficiencyFrequencyRef.
Low-pressure mercury lamps~kW253.7~16 000~30%~ kHz[41]
High-pressure mercury lamps~kW253.7–366.3~15 000~17%~ kHz[42, 43]
KrF excimer laser~W248~500~4%~Hz[44]
Nd:YAG laser~W266~1000~8%~Hz[44]
UV LED~mW210–360~15 000~3%~MHz[45]
DownLoad: CSV

Table 2.   Recent progress in UVC using LED as the light source.

YearLight sourceDetectorWavelength (nm)Bandwidth (MHz)Modulation schemeMax Range (m)SpeedRef.
2020LEDSi APD279170PAM-1612.4 Gb/s[60]
2020LEDSi APD279170PAM-1651.09 Gb/s[61]
2019LEDSi APD2801531.51.18 Gb/s[62]
2018LEDSi APD280153PAM-41.61.6 Gb/s[35]
2018uLEDSi APD262438OFDM0.31 Gb/s[34]
2018LEDPMT2661.9150921.6 Kb/s[31]
2018LEDPIN265OOK1.92 Mb/s[63]
2017LEDSi APD2942971 Mb/s[64]
2017LEDPMT260OOK/PPM100[65]
2016LEDPMT26540250 Kb/s[66]
2016LEDPMT26010064 Kb/s[67]
2016LEDPMT26520[19]
2015LEDPMT265OOK3564 Kb/s[30]
2015LEDPMT2652064 Kb/s[29]
2014LEDPMT265OOK208 Kb/s[68]
2010LEDPMT/APD250OOK/PPM2 Mb/s[69]
2008LEDPMT255OOK[70]
2008LEDSi APD250170100 Mb/s[18]
2007LEDPMT271106[12]
DownLoad: CSV

Table 3.   Comparison of DUV detectors in UVC system.

DetectorSpectral range (nm)Responsivity (A/W)Response time (ns)Dark current (nA)Ref
PMT110–1100~1051–152–30[101]
SiC PIN200–4000.085–0.13~103 × 10–8
Si PIN200–1100~0.386–50~10
AlGaN PIN220–280~0.15~6.5[102]
Si APD260–11000.24–0.5~3 × 1061–100
DownLoad: CSV
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    Received: 16 February 2021 Revised: 29 March 2021 Online: Accepted Manuscript: 27 April 2021Uncorrected proof: 28 April 2021Published: 01 August 2021

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      Article Navigation >  Journal of Semiconductors  > 2021  >  42(8): 081801
      Liang Guo, Yanan Guo, Junxi Wang, Tongbo Wei. Ultraviolet communication technique and its application[J]. Journal of Semiconductors, 2021, 42(8): 081801. doi: 10.1088/1674-4926/42/8/081801 ****L Guo, Y N Guo, J X Wang, T B Wei, Ultraviolet communication technique and its application[J]. J. Semicond., 2021, 42(8): 081801. doi: 10.1088/1674-4926/42/8/081801.
      Citation:
      Liang Guo, Yanan Guo, Junxi Wang, Tongbo Wei. Ultraviolet communication technique and its application[J]. Journal of Semiconductors, 2021, 42(8): 081801. doi: 10.1088/1674-4926/42/8/081801 ****
      L Guo, Y N Guo, J X Wang, T B Wei, Ultraviolet communication technique and its application[J]. J. Semicond., 2021, 42(8): 081801. doi: 10.1088/1674-4926/42/8/081801.
      shu

      Ultraviolet communication technique and its application

      DOI: 10.1088/1674-4926/42/8/081801
      • 1.

        Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

      • 3.

        Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China

      More Information
      • Liang Guo：is currently pursuing his M.S. degree in the Institute of Semiconductors, Chinese Academy of Sciences. He received his B.S. degree in Materials Physics from Hefei University of Technology in 2018. His research mainly focuses on the fabrication of deep-UV LEDs for communications
      • Tongbo Wei：is currently a professor in Institute of Semiconductors, Chinese Academy of Sciences. He received his doctoral degree in engineering from Chinese Academy of Sciences in July 2007. His research interests focus on wide bandgap semiconductor materials and devices, new micro-nano photoelectronic devices, deep ultraviolet light emitting devices, and nitride growth on two-dimensional materials
      • Corresponding author: tbwei@semi.ac.cn
      • Received Date: 2021-02-16
      • Revised Date: 2021-03-29
      • Published Date: 2021-08-10

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