Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 646-651
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InGaN混溶隙的计算

童玉珍 , 陈英勇 and 张国义

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Key words: 混溶隙, InGaN, 应力

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 646-651
      童玉珍, 陈英勇, 张国义. InGaN混溶隙的计算[J]. 半导体学报(英文版), 2000, 21(7): 646-651.
      Citation:
      童玉珍, 陈英勇, 张国义. InGaN混溶隙的计算[J]. 半导体学报(英文版), 2000, 21(7): 646-651.
      shu

      • Received Date: 2015-08-20

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