Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 646-651
|

CONTENTS

InGaN混溶隙的计算

童玉珍 , 陈英勇 and 张国义

+ Author Affiliations

PDF

Key words: 混溶隙, InGaN, 应力

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3021 Times PDF downloads: 1049 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 646-651
      童玉珍, 陈英勇, 张国义. InGaN混溶隙的计算[J]. 半导体学报(英文版), 2000, 21(7): 646-651.
      Citation:
      童玉珍, 陈英勇, 张国义. InGaN混溶隙的计算[J]. 半导体学报(英文版), 2000, 21(7): 646-651.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return