Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 118-123
|

CONTENTS

直拉型Si单晶中金属杂质对氧沉淀行为的影响

沈波 , 杨凯 , 张序余 , 施洪涛 , 张荣 , 施毅 , 郑有炓 , 关口隆史 and 角野浩二

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2469 Times PDF downloads: 1049 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 118-123
      沈波, 杨凯, 张序余, 施洪涛, 张荣, 施毅, 郑有炓, 关口隆史, 角野浩二. 直拉型Si单晶中金属杂质对氧沉淀行为的影响[J]. 半导体学报(英文版), 1997, 18(2): 118-123.
      Citation:
      沈波, 杨凯, 张序余, 施洪涛, 张荣, 施毅, 郑有炓, 关口隆史, 角野浩二. 直拉型Si单晶中金属杂质对氧沉淀行为的影响[J]. 半导体学报(英文版), 1997, 18(2): 118-123.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return