Chin. J. Semicond. > 1990, Volume 11 > Issue 3 > 202-209
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GaAs/GaAlAs单量子阱电光吸收和光调制

朱龙德 , 能飞克 , 王启明 , 陈正豪 , 谢苑林 and 顾世杰

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(3): 202-209
      朱龙德, 能飞克, 王启明, 陈正豪, 谢苑林, 顾世杰. GaAs/GaAlAs单量子阱电光吸收和光调制[J]. 半导体学报(英文版), 1990, 11(3): 202-209.
      Citation:
      朱龙德, 能飞克, 王启明, 陈正豪, 谢苑林, 顾世杰. GaAs/GaAlAs单量子阱电光吸收和光调制[J]. 半导体学报(英文版), 1990, 11(3): 202-209.
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      • Received Date: 2015-08-19

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