Chin. J. Semicond. > 1991, Volume 12 > Issue 3 > 177-183
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不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为

李国华 , 郑宝真 , 韩和相 and 汪兆平

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(3): 177-183
      李国华, 郑宝真, 韩和相, 汪兆平. 不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为[J]. 半导体学报(英文版), 1991, 12(3): 177-183.
      Citation:
      李国华, 郑宝真, 韩和相, 汪兆平. 不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为[J]. 半导体学报(英文版), 1991, 12(3): 177-183.
      shu

      • Received Date: 2015-08-19

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