Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 979-984
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C离子注入Si中Si-C合金的形成及其特征

王引书 , 李晋闽 , 王玉田 , 王衍斌 and 林兰英

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Key words: Si1-xCx合金, 离子注入, 损伤缺陷, 应变分布

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 979-984
      王引书, 李晋闽, 王玉田, 王衍斌, 林兰英. C离子注入Si中Si-C合金的形成及其特征[J]. 半导体学报(英文版), 2001, 22(8): 979-984.
      Citation:
      王引书, 李晋闽, 王玉田, 王衍斌, 林兰英. C离子注入Si中Si-C合金的形成及其特征[J]. 半导体学报(英文版), 2001, 22(8): 979-984.
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      • Received Date: 2015-08-20

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