Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 254-263
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LPE n-GaAlAs:Te中DX中心的导纳谱分析

葛惟锟 and 吴荣汉

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 254-263
      葛惟锟, 吴荣汉. LPE n-GaAlAs:Te中DX中心的导纳谱分析[J]. 半导体学报(英文版), 1986, 7(3): 254-263.
      Citation:
      葛惟锟, 吴荣汉. LPE n-GaAlAs:Te中DX中心的导纳谱分析[J]. 半导体学报(英文版), 1986, 7(3): 254-263.
      shu

      • Received Date: 2015-08-20

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