Chin. J. Semicond. > 1989, Volume 10 > Issue 6 > 457-462
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离子束增强沉积氮化硅薄膜生长及其性能研究

柳襄怀 , 薛滨 , 郑志宏 , 周祖尧 and 邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(6): 457-462
      柳襄怀, 薛滨, 郑志宏, 周祖尧, 邹世昌. 离子束增强沉积氮化硅薄膜生长及其性能研究[J]. 半导体学报(英文版), 1989, 10(6): 457-462.
      Citation:
      柳襄怀, 薛滨, 郑志宏, 周祖尧, 邹世昌. 离子束增强沉积氮化硅薄膜生长及其性能研究[J]. 半导体学报(英文版), 1989, 10(6): 457-462.
      shu

      • Received Date: 2015-08-19

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