Chin. J. Semicond. > 2006, Volume 27 > Issue 11 > 1974-1980
|

PAPERS

Design and Fabrication of Gate-Type Resonant Tunneling Transistors

Guo Weilian, Liang Huilai, Song Ruiliang, Zhang Shilin, Mao Luhong, Hu Liuchang, Li Jianheng, Qi Haitao, Feng Zhen, Tian Guoping, Shang Yuehui, Liu Yongqiang, Li Yali, Yuan Mingwen and Li Xiaobai

+ Author Affiliations

PDF

Abstract: A GaAs-based resonant tunneling transistor with a gate structure (GRTT) has been designed and fabricated successfully for the first time in mainland China.The design of the material structure,device structure,and photolithography mask;the fabrication of the device;and the parameter measurement and analysis are described systematically.The fabricated GRTT has a maximum PVCR of 46 and maximum transconductance of 8mS.This work establishes a foundation for further improvement of the performance and parameters of RTTs.

Key words: RTT, gate controlled device, GaAs based quantum device

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3260 Times PDF downloads: 1495 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(11): 1974-1980
      Guo Weilian, Liang Huilai, Song Ruiliang, Zhang Shilin, Mao Luhong, Hu Liuchang, Li Jianheng, Qi Haitao, Feng Zhen, Tian Guoping, Shang Yuehui, Liu Yongqiang, Li Yali, Yuan Mingwen, Li Xiaobai. Design and Fabrication of Gate-Type Resonant Tunneling Transistors[J]. Journal of Semiconductors, 2006, 27(11): 1974-1980. ****Guo W L, Liang H L, Song R L, Zhang S L, Mao L H, Hu L C, Li J H, Qi H T, Feng Z, Tian G P, Shang Y H, Liu Y Q, Li Y L, Yuan M W, Li X B. Design and Fabrication of Gate-Type Resonant Tunneling Transistors[J]. Chin. J. Semicond., 2006, 27(11): 1974.
      Citation:
      Guo Weilian, Liang Huilai, Song Ruiliang, Zhang Shilin, Mao Luhong, Hu Liuchang, Li Jianheng, Qi Haitao, Feng Zhen, Tian Guoping, Shang Yuehui, Liu Yongqiang, Li Yali, Yuan Mingwen, Li Xiaobai. Design and Fabrication of Gate-Type Resonant Tunneling Transistors[J]. Journal of Semiconductors, 2006, 27(11): 1974-1980. ****
      Guo W L, Liang H L, Song R L, Zhang S L, Mao L H, Hu L C, Li J H, Qi H T, Feng Z, Tian G P, Shang Y H, Liu Y Q, Li Y L, Yuan M W, Li X B. Design and Fabrication of Gate-Type Resonant Tunneling Transistors[J]. Chin. J. Semicond., 2006, 27(11): 1974.
      shu

      Design and Fabrication of Gate-Type Resonant Tunneling Transistors

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • School of Electronic Information Engineering, Tianjin University,Tianjin 300072,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return