Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 693-697
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高斜效率高功率850nm氧化限制型垂直腔面发射激光器(英文)

岳爱文 , 张伟 , 詹敦平 , 王任凡 , 沈坤 and 石兢

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Key words: 砷化镓, 垂直腔面发射激光器, 半导体激光器

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 693-697
      岳爱文, 张伟, 詹敦平, 王任凡, 沈坤, 石兢. 高斜效率高功率850nm氧化限制型垂直腔面发射激光器(英文)[J]. 半导体学报(英文版), 2003, 24(7): 693-697.
      Citation:
      岳爱文, 张伟, 詹敦平, 王任凡, 沈坤, 石兢. 高斜效率高功率850nm氧化限制型垂直腔面发射激光器(英文)[J]. 半导体学报(英文版), 2003, 24(7): 693-697.
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      • Received Date: 2015-08-20

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