Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 218-222
|

PAPERS

Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors

Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning and Qiu Dongjiang

+ Author Affiliations

PDF

Abstract: We propose to use Hexagonal phase Zn1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors(TFTs).The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made.The TFTs have demonstrated an on/off ratio of 1E4 and a channel mobility on the order of 0.6cm2/(V·s).Leakage current is as low as 4.0E-8A at 2.5MV/cm electrical field.

Key words: cubic- and hexagonal- phase ZnMgO, thin film transistor electrical properties, 电学特性

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3192 Times PDF downloads: 1838 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(S1): 218-222
      Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning, Qiu Dongjiang. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Journal of Semiconductors, 2006, 27(S1): 218-222. ****Wu H Z, Liang J, Lao Y F, Yu P, Xu T N, Qiu D J. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Chin. J. Semicond., 2006, 27(13): 218.
      Citation:
      Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning, Qiu Dongjiang. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Journal of Semiconductors, 2006, 27(S1): 218-222. ****
      Wu H Z, Liang J, Lao Y F, Yu P, Xu T N, Qiu D J. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Chin. J. Semicond., 2006, 27(13): 218.
      shu

      Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors

      • State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Department of Physics,Zhejiang University,Hangzhou 310028,China

      • State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanhai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Department of Physics,Zhejiang University,Hangzhou 310028,China

      • Department of Physics,Zhejiang University,Hangzhou 310028,China

      • Department of Physics,Zhejiang University,Hangzhou 310028,China

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return