Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 427-430
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Si(111)-(3~(1/2)×3~(1/2))R30°-Ga表面原子结构

邓丙成 , 徐耕 , 陈文华 , 何永健 , 谢茂海 and 唐叔贤

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Key words: Si, 表面, 原子结构

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 427-430
      邓丙成, 徐耕, 陈文华, 何永健, 谢茂海, 唐叔贤. Si(111)-(3~(1/2)×3~(1/2))R30°-Ga表面原子结构[J]. 半导体学报(英文版), 2001, 22(4): 427-430.
      Citation:
      邓丙成, 徐耕, 陈文华, 何永健, 谢茂海, 唐叔贤. Si(111)-(3~(1/2)×3~(1/2))R30°-Ga表面原子结构[J]. 半导体学报(英文版), 2001, 22(4): 427-430.
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      • Received Date: 2015-08-20

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