Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 497-500
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δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移

程文超 , 夏建白 , 郑文硕 , 黄醒良 , 金载元 , 林三镐 , 瑞恩庆 and 李亨宰

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(6): 497-500
      程文超, 夏建白, 郑文硕, 黄醒良, 金载元, 林三镐, 瑞恩庆, 李亨宰. δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移[J]. 半导体学报(英文版), 1999, 20(6): 497-500.
      Citation:
      程文超, 夏建白, 郑文硕, 黄醒良, 金载元, 林三镐, 瑞恩庆, 李亨宰. δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移[J]. 半导体学报(英文版), 1999, 20(6): 497-500.
      shu

      • Received Date: 2015-08-20

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