Chin. J. Semicond. > 1993, Volume 14 > Issue 11 > 695-701
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在超高真空系统中对硅表面进行电子束退火的L_(23)VV Auger能谱精细结构分析

卢志恒 , 王大椿 , 罗晏 , 苏颖 and R.Pfandzelter

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    Received: 20 August 2015 Revised: Online: Published: 01 November 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(11): 695-701
      卢志恒, 王大椿, 罗晏, 苏颖, R.Pfandzelter. 在超高真空系统中对硅表面进行电子束退火的L_(23)VV Auger能谱精细结构分析[J]. 半导体学报(英文版), 1993, 14(11): 695-701.
      Citation:
      卢志恒, 王大椿, 罗晏, 苏颖, R.Pfandzelter. 在超高真空系统中对硅表面进行电子束退火的L_(23)VV Auger能谱精细结构分析[J]. 半导体学报(英文版), 1993, 14(11): 695-701.
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      • Received Date: 2015-08-20

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