| Citation: |
Duan Baoxing, Zhang Bo, Li Zhaoji. A Breakdown Voltage Model of a PSOI Structure with a p-Type Buried Layer[J]. Journal of Semiconductors, 2005, 26(11): 2149-2153.
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Duan B X, Zhang B, Li Z J. A Breakdown Voltage Model of a PSOI Structure with a p-Type Buried Layer[J]. Chin. J. Semicond., 2005, 26(11): 2149.
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A Breakdown Voltage Model of a PSOI Structure with a p-Type Buried Layer
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Abstract
A new PSOI structure with a p-type buried layer is developed,which is called BPSOI.Its mechanism of breakdown is an additive electric field modulation,which inducts new electric field peaks in surface electric field distribution by p-type buried layer charges.The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the p-type buried layer.The result is that the breakdown voltage is increased by 52%～58% and the on-resistance is decreased by 45%～48% in virtue of the 2D MEDICI simulation.-
Keywords:
- BPSOI,
- additive electric field,
- breakdown voltage,
- on-resistance
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References
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Proportional views
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