Chin. J. Semicond. > 2002, Volume 23 > Issue 5 > 455-458
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非掺及掺铁磷化铟中的残留施主缺陷(英文)

赵有文 , 孙聂枫 , 冯汉源 , C D Beling , 孙同年 and 林兰英

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Key words: 磷化铟, 半绝缘, 施主缺陷

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(5): 455-458
      赵有文, 孙聂枫, 冯汉源, C D Beling, 孙同年, 林兰英. 非掺及掺铁磷化铟中的残留施主缺陷(英文)[J]. 半导体学报(英文版), 2002, 23(5): 455-458.
      Citation:
      赵有文, 孙聂枫, 冯汉源, C D Beling, 孙同年, 林兰英. 非掺及掺铁磷化铟中的残留施主缺陷(英文)[J]. 半导体学报(英文版), 2002, 23(5): 455-458.
      shu

      • Received Date: 2015-08-19

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