Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 682-687
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不同辐射剂量率下CMOS器件的电离辐射性能

张正选 , 罗晋生 , 袁仁峰 , 何宝平 and 姜景和

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 682-687
      张正选, 罗晋生, 袁仁峰, 何宝平, 姜景和. 不同辐射剂量率下CMOS器件的电离辐射性能[J]. 半导体学报(英文版), 1999, 20(8): 682-687.
      Citation:
      张正选, 罗晋生, 袁仁峰, 何宝平, 姜景和. 不同辐射剂量率下CMOS器件的电离辐射性能[J]. 半导体学报(英文版), 1999, 20(8): 682-687.
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      • Received Date: 2015-08-20

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