Chin. J. Semicond. > 1989, Volume 10 > Issue 1 > 12-17
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In_(0.25)Ga_(0.75)As/GaAs应变异质结的离子沟道分析

殷士端 , 吴春武 , 张敬平 , 刘家瑞 and 朱沛然

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(1): 12-17
      殷士端, 吴春武, 张敬平, 刘家瑞, 朱沛然. In_(0.25)Ga_(0.75)As/GaAs应变异质结的离子沟道分析[J]. 半导体学报(英文版), 1989, 10(1): 12-17.
      Citation:
      殷士端, 吴春武, 张敬平, 刘家瑞, 朱沛然. In_(0.25)Ga_(0.75)As/GaAs应变异质结的离子沟道分析[J]. 半导体学报(英文版), 1989, 10(1): 12-17.
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      • Received Date: 2015-08-19

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