Chin. J. Semicond. > 1989, Volume 10 > Issue 5 > 395-398
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硅中E_c-O.18eV铜能级的单轴应力深能级瞬态谱研究

姚秀琛 , 王雷 , 陈开茅 and 秦国刚

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(5): 395-398
      姚秀琛, 王雷, 陈开茅, 秦国刚. 硅中E_c-O.18eV铜能级的单轴应力深能级瞬态谱研究[J]. 半导体学报(英文版), 1989, 10(5): 395-398.
      Citation:
      姚秀琛, 王雷, 陈开茅, 秦国刚. 硅中E_c-O.18eV铜能级的单轴应力深能级瞬态谱研究[J]. 半导体学报(英文版), 1989, 10(5): 395-398.
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      • Received Date: 2015-08-19

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