| Citation: |
Li Fanghua, Jiang Zuimin. Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings[J]. Journal of Semiconductors, 2006, 27(S1): 148-150.
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Li F H, Jiang Z M. Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings[J]. Chin. J. Semicond., 2006, 27(13): 148.
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Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings
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Abstract
The shape transformation from quantum dots (QDs) to quantum rings (QRs) at Si capping temperature of 640℃ is investigated.A mechanism based on strain energy relief is suggested to explain the QD to QR shape transformation.Successful shape preservation of SiGe QRs is obtained by capping QRs at temperatures below 350℃.A kinetic mechanism is suggested to explain the shape preservation of SiGe QRs at low temperature capping.-
Keywords:
- :quantum dot,
- quantum ring,
- MBE,
- SiGe
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References
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Proportional views
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