Chin. J. Semicond. > 1993, Volume 14 > Issue 7 > 416-422
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高压终端结构场分析边界元数值方法

梁苏军 and 罗晋生

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    Received: 20 August 2015 Revised: Online: Published: 01 July 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(7): 416-422
      梁苏军, 罗晋生. 高压终端结构场分析边界元数值方法[J]. 半导体学报(英文版), 1993, 14(7): 416-422.
      Citation:
      梁苏军, 罗晋生. 高压终端结构场分析边界元数值方法[J]. 半导体学报(英文版), 1993, 14(7): 416-422.
      shu

      • Received Date: 2015-08-20

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