| Citation: |
Jian Zhongxiang, Ye Zhizhen, Gao Guohua, Lu Yangfan, Zhao Binghui, Zeng Yujia, Zhu Liping. Deposition of Al-N Co-Doped p-Type Zn0.95Mg0.05O Thin Films[J]. Journal of Semiconductors, 2007, 28(3): 425-429.
****
Jian Z X, Ye Z Z, Gao G H, Lu Y F, Zhao B H, Zeng Y J, Zhu L P. Deposition of Al-N Co-Doped p-Type Zn0.95Mg0.05O Thin Films[J]. Chin. J. Semicond., 2007, 28(3): 425.
|
Deposition of Al-N Co-Doped p-Type Zn0.95Mg0.05O Thin Films
-
Abstract
Al-N codoped p-type Zn0.95Mg0.05O thin films were deposited on glass substrates by DC reactive manetron sputtering, N2O was used as the N doping source. The XRD patterns showed that the introduction of Mg and Al has no effect on the crystallinity of the films, the films all showed c-axis preferential orientation.A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 400 to 530℃.The lowest reliable room temperature resistivity was found to be 58.5Ω·cm,with a carrier concentration of 1.95e17cm-3 and a Hall mobility of 0.546cm2／(V·s).The p-type behavior is stable.The optical transmittance spectra reveal blue shift in optical bandgap for the p-type Zn0.95Mg0.05O comparing with that for pure ZnO,which confirms the effective incorporation of Mg.The band gap of alloy is controllable.-
Keywords:
- ZnMgO,
- p-type doping,
- thin films
-
References
-
Proportional views
DownLoad: