J. Semicond. > 2008, Volume 29 > Issue 1 > 39-44
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RTD’s Relaxation Oscillation Characteristics with Applied Pressure

Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Liu Jun and Qiao Hui

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Abstract: The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.The oscillation circuit is simulated and designed by Pspice 8.0,and the measured oscillation frequency is up to 200kHz.Using molecular beam epitaxy (MBE),AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an air-bridge structure.Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure,the relaxation oscillation characteristics have been studied,which show that the relaxation oscillation frequency has approximately a -17.9kHz/MPa change.

Key words: resonant tunneling diode, relaxation oscillation, Raman spectrum, piezoresistive effect

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    Received: 18 August 2015 Revised: 20 August 2007 Online: Published: 01 January 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(1): 39-44
      Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Liu Jun, Qiao Hui. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. Journal of Semiconductors, 2008, 29(1): 39-44. ****Tong Z M, Xue C Y, Zhang B Z, Liu J, Qiao H. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. J. Semicond., 2008, 29(1): 39.
      Citation:
      Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Liu Jun, Qiao Hui. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. Journal of Semiconductors, 2008, 29(1): 39-44. ****
      Tong Z M, Xue C Y, Zhang B Z, Liu J, Qiao H. RTD’s Relaxation Oscillation Characteristics with Applied Pressure[J]. J. Semicond., 2008, 29(1): 39.
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      RTD’s Relaxation Oscillation Characteristics with Applied Pressure

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China

      • National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-03
      • Revised Date: 2007-08-20
      • Published Date: 2007-12-26

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