Chin. J. Semicond. > 1989, Volume 10 > Issue 10 > 781-787
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TiSi_2薄膜的形成特性及TiSi_2/多晶硅复合栅结构的研究

陶江 , 赵铁民 , 张国炳 , 王阳元 , 汪锁发 and 李永洪

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(10): 781-787
      陶江, 赵铁民, 张国炳, 王阳元, 汪锁发, 李永洪. TiSi_2薄膜的形成特性及TiSi_2/多晶硅复合栅结构的研究[J]. 半导体学报(英文版), 1989, 10(10): 781-787.
      Citation:
      陶江, 赵铁民, 张国炳, 王阳元, 汪锁发, 李永洪. TiSi_2薄膜的形成特性及TiSi_2/多晶硅复合栅结构的研究[J]. 半导体学报(英文版), 1989, 10(10): 781-787.
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      • Received Date: 2015-08-19

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