Chin. J. Semicond. > 1997, Volume 18 > Issue 4 > 286-291
|

CONTENTS

超高电流增益多晶硅发射极BICFET的研制与特性

郭维廉 , 宋玉兴 , M．A．Green and M．K．Morvvej－Farshi

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2337 Times PDF downloads: 800 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 April 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(4): 286-291
      郭维廉, 宋玉兴, M．A．Green, M．K．Morvvej－Farshi. 超高电流增益多晶硅发射极BICFET的研制与特性[J]. 半导体学报(英文版), 1997, 18(4): 286-291.
      Citation:
      郭维廉, 宋玉兴, M．A．Green, M．K．Morvvej－Farshi. 超高电流增益多晶硅发射极BICFET的研制与特性[J]. 半导体学报(英文版), 1997, 18(4): 286-291.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return