Chin. J. Semicond. > 1987, Volume 8 > Issue 2 > 160-166
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离子注入退火过程中高浓度砷硼再分布扩散的一种新的解析模型

汤庭鳌 and Carlos Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(2): 160-166
      汤庭鳌, Carlos Araujo. 离子注入退火过程中高浓度砷硼再分布扩散的一种新的解析模型[J]. 半导体学报(英文版), 1987, 8(2): 160-166.
      Citation:
      汤庭鳌, Carlos Araujo. 离子注入退火过程中高浓度砷硼再分布扩散的一种新的解析模型[J]. 半导体学报(英文版), 1987, 8(2): 160-166.
      shu

      • Received Date: 2015-08-19

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