| Citation: |
Wang Yanjie, Yang Ziwen, Liao Hui, Hu Chengyu, Pan Yaobo, Yang Zhijian, Zhang Bei, Zhang Guoyi, Hu Xiaodong. Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN[J]. Journal of Semiconductors, 2007, 28(S1): 372-375.
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Wang Y J, Yang Z W, Liao H, Hu C Y, Pan Y B, Yang Z J, Zhang B, Zhang G Y, Hu X D. Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN[J]. Chin. J. Semicond., 2007, 28(S1): 372.
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Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN
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Abstract
We obtain and analyze specific contact resistivity and current-voltage curve of alloyed Ni/Au on p-GaN by transmission line model(TLM)measurement.bV(current density-voltage)CUrVe between the alloyed Ni/Au and p-GaN is deduced from the I-V curve·Based on Thermionic Emission Mechanism and Image Force Theory，we get effective barrier height = 0.41eV，acceptor concentration Na=4 x10^19cm-3，band bending Vi=0.26V，and Ef-Ev=0.15eV，which agree well with the theoretical values and other experimental results.-
Keywords:
- p-GaN,
- transmission line model)image force,
- Ni/Au
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References
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Proportional views
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