Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 227-231

PAPERS

Model of Non-Normal Process Capability Indices to Semiconductor Quality Control

Wang Shaoxi and Jia Xinzhang

+ Author Affiliations

PDF

Abstract: It is necessary to compute the process capability index (PCI) of non-normal data when considering the level of semiconductor processes.Several main PCIs that have already been presented are analyzed,and their advantages and disadvantages are presented.Based on Chebyshev-Hermite polynomials,a model for computing non-normal PCIs is then given when regarding the fact that these four moments,i.e.mean,standard deviation,skewness,and kurtosis,are suitable to approximately characterize the data distribution properties,which is effective when data deviation is large.Finally,an example is given for proving the relational model.

Key words: non-normal distributionprocess capability indexChebyshev-Hermite polynomialsquality control

1

Inkjet printed large-area flexible circuits: a simple methodology for optimizing the printing quality

Tao Cheng, Youwei Wu, Xiaoqin Shen, Wenyong Lai, Wei Huang, et al.

Journal of Semiconductors, 2018, 39(1): 015001. doi: 10.1088/1674-4926/39/1/015001

2

High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

Yingchun Fu, Xiaofeng Wang, Liuhong Ma, Yaling Zhou, Xiang Yang, et al.

Journal of Semiconductors, 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004

3

The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Yingxia Yu, Zhaojun Lin, Yuanjie Lü, Zhihong Feng, Chongbiao Luan, et al.

Journal of Semiconductors, 2014, 35(12): 124007. doi: 10.1088/1674-4926/35/12/124007

4

Evaluation of planarization capability of copper slurry in the CMP process

Kangda Yin, Shengli Wang, Yuling Liu, Chenwei Wang, Xiang Li, et al.

Journal of Semiconductors, 2013, 34(3): 036002. doi: 10.1088/1674-4926/34/3/036002

5

A multivariate process capability index with a spatial coefficient

Shaoxi Wang, Mingxin Wang, Xiaoya Fan, Shengbing Zhang, Ru Han, et al.

Journal of Semiconductors, 2013, 34(2): 026001. doi: 10.1088/1674-4926/34/2/026001

6

Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process

Chen Shan, Pan Tianhong, Li Zhengming, Jang Shi-Shang

Journal of Semiconductors, 2012, 33(6): 066002. doi: 10.1088/1674-4926/33/6/066002

7

Simultaneous quality improvement of the roughness and refractive index of SiC thin films

Gh. Sareminia, H. Simchi, A. Ostovari, L. Lavasanpour

Journal of Semiconductors, 2012, 33(6): 063001. doi: 10.1088/1674-4926/33/6/063001

8

As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features

Zou Liner, Wang Gouri, Shen Yun, Chen Baoxue, Mamoru Iso, et al.

Journal of Semiconductors, 2011, 32(11): 112004. doi: 10.1088/1674-4926/32/11/112004

9

A multivariate process capability index model system

Wang Shaoxi, Wang Danghui

Journal of Semiconductors, 2011, 32(1): 016001. doi: 10.1088/1674-4926/32/1/016001

10

Design and implementation of a low-pass filter for microsensor signal processing

Wang Zhuping, Zhong Shun'an, Ding Yingtao, Wang Xiaoqing

Journal of Semiconductors, 2010, 31(12): 125002. doi: 10.1088/1674-4926/31/12/125002

11

TDDB improvement by optimized processes on metal–insulator–silicon capacitors with atomic layer deposition of Al2O3 and multi layers of TiN film structure

Peng Kun, Wang Biao, Xiao Deyuan, Qiu Shengfen, Lin D C, et al.

Journal of Semiconductors, 2009, 30(8): 082005. doi: 10.1088/1674-4926/30/8/082005

12

Design of an ultra-low-power digital processor for passive UHF RFID tags

Shi Wanggen, Zhuang Yiqi, Li Xiaoming, Wang Xianghua, Jin Zhao, et al.

Journal of Semiconductors, 2009, 30(4): 045004. doi: 10.1088/1674-4926/30/4/045004

13

High quality AlGaN grown on a high temperature AlN template by MOCVD

Yan Jianchang, Wang Junxi, Liu Naixin, Liu Zhe, Ruan Jun, et al.

Journal of Semiconductors, 2009, 30(10): 103001. doi: 10.1088/1674-4926/30/10/103001

14

Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

Zhou Xiaowei, Li Peixian, Xu Shengrui, Hao Yue

Journal of Semiconductors, 2009, 30(4): 043002. doi: 10.1088/1674-4926/30/4/043002

15

An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices

Li Qi, Li Zhaoji, Zhang Bo

Chinese Journal of Semiconductors , 2006, 27(7): 1177-1182.

16

Defect Control and High Quality Surface Preparation of InP Substrate

Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang, et al.

Chinese Journal of Semiconductors , 2006, 27(12): 2127-2133.

17

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages

Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei

Chinese Journal of Semiconductors , 2006, 27(2): 294-297.

18

An All-E-Beam Lithography Process for the Patterningof 2D Photonic Crystal Waveguide Devices

Yu Hejun, Yu Jinzhong, Chen Shaowu

Chinese Journal of Semiconductors , 2006, 27(11): 1894-1899.

19

Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing

Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin

Chinese Journal of Semiconductors , 2006, 27(3): 413-418.

20

New Method for Determining Characteristic Parameters of Normal Distribution

Chinese Journal of Semiconductors , 2000, 21(11): 1060-1063.

  • Search

    Advanced Search >>

    GET CITATION

    Wang Shaoxi, Jia Xinzhang. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Journal of Semiconductors, 2007, 28(2): 227-231.
    Wang S X, Jia X Z. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Chin. J. Semicond., 2007, 28(2): 227.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2844 Times PDF downloads: 1602 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 20 October 2006 Online: Published: 01 February 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wang Shaoxi, Jia Xinzhang. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Journal of Semiconductors, 2007, 28(2): 227-231. ****Wang S X, Jia X Z. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Chin. J. Semicond., 2007, 28(2): 227.
      Citation:
      Wang Shaoxi, Jia Xinzhang. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Journal of Semiconductors, 2007, 28(2): 227-231. ****
      Wang S X, Jia X Z. Model of Non-Normal Process Capability Indices to Semiconductor Quality Control[J]. Chin. J. Semicond., 2007, 28(2): 227.

      Model of Non-Normal Process Capability Indices to Semiconductor Quality Control

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-10
      • Revised Date: 2006-10-20
      • Published Date: 2007-01-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return