Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 313-316

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Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells

成步文 , 李代宗 , 黄昌俊 , 张春晖 , 于卓 , 余金中 and 王启明

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Key words: Ge/Si

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 313-316
      成步文, 李代宗, 黄昌俊, 张春晖, 于卓, 余金中, 王启明. Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells[J]. 半导体学报(英文版), 2000, 21(4): 313-316.
      Citation:
      成步文, 李代宗, 黄昌俊, 张春晖, 于卓, 余金中, 王启明. Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells[J]. 半导体学报(英文版), 2000, 21(4): 313-316.
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      • Received Date: 2015-08-20

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