Chin. J. Semicond. > 1995, Volume 16 > Issue 8 > 627-631
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高质量GaAs－AlGaAs材料MBE生长研究及其应用

杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(8): 627-631
      杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠. 高质量GaAs－AlGaAs材料MBE生长研究及其应用[J]. 半导体学报(英文版), 1995, 16(8): 627-631.
      Citation:
      杨国文，肖建伟，徐遵图，郑婉华，曾一平，徐俊英，张敬明，陈良惠. 高质量GaAs－AlGaAs材料MBE生长研究及其应用[J]. 半导体学报(英文版), 1995, 16(8): 627-631.
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      • Received Date: 2015-08-19

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