Chin. J. Semicond. > 1983, Volume 4 > Issue 5 > 444-448
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非饱和C-t法确定体产生寿命和表面产生速度

张秀淼 and 贺国根

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(5): 444-448
      张秀淼, 贺国根. 非饱和C-t法确定体产生寿命和表面产生速度[J]. 半导体学报(英文版), 1983, 4(5): 444-448.
      Citation:
      张秀淼, 贺国根. 非饱和C-t法确定体产生寿命和表面产生速度[J]. 半导体学报(英文版), 1983, 4(5): 444-448.
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      • Received Date: 2015-08-20

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