Chin. J. Semicond. > 1997, Volume 18 > Issue 10 > 776-781
|

CONTENTS

用于薄介质栅的PECVD法低温形成SiO_xN_y薄膜及其电学特性

陈蒲生 , 冯文修 , 王川 , 王锋 , 刘小阳 , 田万廷 and 曾绍鸿

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2079 Times PDF downloads: 1113 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 October 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(10): 776-781
      陈蒲生, 冯文修, 王川, 王锋, 刘小阳, 田万廷, 曾绍鸿. 用于薄介质栅的PECVD法低温形成SiO_xN_y薄膜及其电学特性[J]. 半导体学报(英文版), 1997, 18(10): 776-781.
      Citation:
      陈蒲生, 冯文修, 王川, 王锋, 刘小阳, 田万廷, 曾绍鸿. 用于薄介质栅的PECVD法低温形成SiO_xN_y薄膜及其电学特性[J]. 半导体学报(英文版), 1997, 18(10): 776-781.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return