Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 115-118
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Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy

Gao Yuzhu, Gong Xiuying and Tomuo Yamaguchi

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Abstract: A study of transmission spectra for InAsh Sb，alloy with cutoff wavelength of 8～12pm grown by melt-epitaxy (ME)was performed.The transmission spectra of the epilayers were measured using a FTIR photospectrometer.A calculation of the transmission spectra for InAs1-xSbx alloy was carried out under an assumption of composition microscopic distribution function.A fundamental agreement between experiments and theoretical calculation is obtained，demonstrating energy band gap narrowing of this material.The composition microscopic distribution in-homogeneity may affect the energy band gap structure for IIl·V mixed crystals.

Key words: melt epitaxy, cutoff wavelength, transmittance spectrum, microscopic distribution

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 115-118
      Gao Yuzhu, Gong Xiuying, Tomuo Yamaguchi. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 115-118. ****Gao Y Z, Gong X Y, Tomuo Y. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 115.
      Citation:
      Gao Yuzhu, Gong Xiuying, Tomuo Yamaguchi. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Journal of Semiconductors, 2007, 28(S1): 115-118. ****
      Gao Y Z, Gong X Y, Tomuo Y. Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 115.
      shu

      Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy

      • College of Electronics and Information Engineering，Tongji University，Shanghai 200092，China,College of Electronics and Information Engineering，Tongji University，Shanghai 200092，China and Research Institute oyElectronics, Shizuoka University，Hamamatsu 432·8011，Japan

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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