Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 751-755
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基于标准CMOS工艺的扇形磁敏晶体管及其模型

姚韵若 and 朱大中

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Key words: MAGFET, CMOS, 几何修正因子, 相对灵敏度, 数学模型

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 751-755
      姚韵若, 朱大中. 基于标准CMOS工艺的扇形磁敏晶体管及其模型[J]. 半导体学报(英文版), 2005, 26(4): 751-755.
      Citation:
      姚韵若, 朱大中. 基于标准CMOS工艺的扇形磁敏晶体管及其模型[J]. 半导体学报(英文版), 2005, 26(4): 751-755.
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      • Received Date: 2015-08-19

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