Chin. J. Semicond. > 1987, Volume 8 > Issue 3 > 247-253
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固相反应形成硅化钛薄膜方法及特性研究

洪沨 , 李炳宗 , 姜国宝 , 黄维宁 , 张强基 and 费璐

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(3): 247-253
      洪沨, 李炳宗, 姜国宝, 黄维宁, 张强基, 费璐. 固相反应形成硅化钛薄膜方法及特性研究[J]. 半导体学报(英文版), 1987, 8(3): 247-253.
      Citation:
      洪沨, 李炳宗, 姜国宝, 黄维宁, 张强基, 费璐. 固相反应形成硅化钛薄膜方法及特性研究[J]. 半导体学报(英文版), 1987, 8(3): 247-253.
      shu

      • Received Date: 2015-08-19

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