Chin. J. Semicond. > 1994, Volume 15 > Issue 7 > 470-477
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快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究

冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(7): 470-477
      冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平. 快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究[J]. 半导体学报(英文版), 1994, 15(7): 470-477.
      Citation:
      冯星伟，苏毅，戴自怡，陈良尧，钱佑华，方景松，郑庆平. 快速氧化生长超薄硅氧化层的变入射角椭圆偏振研究[J]. 半导体学报(英文版), 1994, 15(7): 470-477.
      shu

      • Received Date: 2015-08-18

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