Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 74-81
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~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究

夏日源 , 谭春雨 , 杨洪 , 胡燮荣 , 陈立信 , 王宜华 , 孙秀芳 , 郑宗爽 , 章其初 , 朱沛然 and 刘家瑞

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    夏日源, 谭春雨, 杨洪, 胡燮荣, 陈立信, 王宜华, 孙秀芳, 郑宗爽, 章其初, 朱沛然, 刘家瑞. ~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究[J]. 半导体学报(英文版), 1988, 9(1): 74-81.
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    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 74-81
      夏日源, 谭春雨, 杨洪, 胡燮荣, 陈立信, 王宜华, 孙秀芳, 郑宗爽, 章其初, 朱沛然, 刘家瑞. ~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究[J]. 半导体学报(英文版), 1988, 9(1): 74-81.
      Citation:
      夏日源, 谭春雨, 杨洪, 胡燮荣, 陈立信, 王宜华, 孙秀芳, 郑宗爽, 章其初, 朱沛然, 刘家瑞. ~(19)F~+离子注入Pb_(1-x)Sn_xTe,CdTe和Si材料中氟的深度分布研究[J]. 半导体学报(英文版), 1988, 9(1): 74-81.
      shu

      • Received Date: 2015-08-19

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