Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 637-642
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双层多晶硅FLOTOX EEPROM特性的模拟和验证

黄飞鸿 , 郑国祥 and 吴瑞

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Key words: FLOTOX EEPROM, 阈值电压, 写入, 隧道氧化层

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 637-642
      黄飞鸿, 郑国祥, 吴瑞. 双层多晶硅FLOTOX EEPROM特性的模拟和验证[J]. 半导体学报(英文版), 2003, 24(6): 637-642.
      Citation:
      黄飞鸿, 郑国祥, 吴瑞. 双层多晶硅FLOTOX EEPROM特性的模拟和验证[J]. 半导体学报(英文版), 2003, 24(6): 637-642.
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      • Received Date: 2015-08-20

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