Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 637-642
|

CONTENTS

双层多晶硅FLOTOX EEPROM特性的模拟和验证

黄飞鸿 , 郑国祥 and 吴瑞

+ Author Affiliations

PDF

Key words: FLOTOX EEPROM, 阈值电压, 写入, 隧道氧化层

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2624 Times PDF downloads: 1186 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 637-642
      黄飞鸿, 郑国祥, 吴瑞. 双层多晶硅FLOTOX EEPROM特性的模拟和验证[J]. 半导体学报(英文版), 2003, 24(6): 637-642.
      Citation:
      黄飞鸿, 郑国祥, 吴瑞. 双层多晶硅FLOTOX EEPROM特性的模拟和验证[J]. 半导体学报(英文版), 2003, 24(6): 637-642.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return